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OutlineTCADsimulationprinciplesTCADsimulationprinciples:Beyondthestandardmodel!TCADsimulationprinciplesTCADsimulationworkflowProcessFlowSimulationProcessFlowSimulationImportanceofmeshingproperlyPhysics(DeviceSimulation)Generation/RecombinationGeneration/RecombinationRadiationdamageImpactionizationPhonon-assistedtrap-to-bandtunnellingNumericalmethodsandconvergenceComparisonofmaincommercialTCADsoftwarepackagesComparisonofmaincommercialTCADsoftwarepackagesSENTAURUSSILVACOAnewplayerinthemarketCommonaspectsTCADSimulationcapabilitiesATLASGuardRingSimulationandSpace-ChargeSigninversion(SCSI)ATLASGuardRingSimulationandSpace-ChargeSigninversion(SCSI)ATLASGR:MeasurementvsSimulationChargemultiplicationinsiliconplanarsensorsAnexample:1Dheavilyirradiatedn-in-pdiodeElectricfieldprofilesChargecollectionefficiencyChargemultiplicationinsiliconplanarsensorsDeviceSimulation:PotentialdistributionP-sprayinsulationPulseShapeandRisetimeMagneticFieldEffectsFrommeasurementstopredictionConclusionPublicationsSimulationofdetectorbehaviour:MCChargeTransportSimulationofdetectorbehaviour:MCChargeTransportSimulationofdetectorbehaviour:GEANT4simulationanddigitizationcalibrationSimulationofdetectorbehaviour:GEANT4simulationanddigitizationcalibrationExampleTricksformeshingproperly2Dsimulation:Stripswithvariousdopingprofileandgeometry2Dsimulation:Stripswithvariousdopingprofileandgeometry2Dsimulation:Leakagecurrent