具有HfNHfO_2栅结构的p型MOSFET中的负偏置-温度不稳定性研究-豆柴文库

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具有HfNHfO_2栅结构的p型MOSFET中的负偏置-温度不稳定性研究
Abstract:
Inthispaper,weinvestigatethenegativebiastemperatureinstability(NBTI)inp-typemetal-oxide-semiconductorfield-effecttransistors(pMOSFETs)withagatestructureofHfNHfO_2.NBTIisawell-knownreliabilityissueinmodernCMOStechnologies,whereprolongedoperationundernegativebiasconditionsandelevatedtemperaturesleadstodegradationofthedeviceperformance.TheHfNHfO_2gatestructurehasgainedattentionduetoitssuperiorelectricalpropertiesandhigh-performancecapabilities.However,theinvestigationofNBTIinpMOSFETswiththisgatestructureisstilllimited.
Inthisstudy,weaimtoanalyzetheNBTIbehaviorinpMOSFETswithHfNHfO_2gatestructurethroughexperimentalmeasurementsandsimulations.WebeginbydiscussingtheimportanceofNBTIanditsimpactondeviceperformanceandreliability.Next,weprovideabriefoverviewoftheHfNHfO_2gatestructureanditsadvantagesoverconventionalgatedielectricmaterials.
ThemethodologyemployedinthisstudyinvolvesfabricatingpMOSFETswithHfNHfO_2gatestructureonasiliconsubstrate.Thedevicesaresubjectedtodifferentlevelsofnegativebiasstress(NBS)atelevatedtemperatures,andtheirelectricalcharacteristicsaremonitoredovertime.TheNBTIdegradationisquantifiedbymeasuringtheshiftinthresholdvoltageandthedecreaseindraincurrent.
OurresultsindicatethatpMOSFETswithHfNHfO_2gatestructureexhibitsignificantNBTIdegradationundernegativebiasconditions.ThethresholdvoltageshiftanddraincurrentdecreasearefoundtobedependentonthemagnitudeofNBSandthetemperatureatwhichthestressisapplied.WeobservethathigherlevelsofNBSandelevatedtemperaturesacceleratethedegradation,indicatingastrongnegativebiasandtemperaturedependenceoftheNBTIeffect.
Throughsimulations,wegaininsightsintotheunderlyingmechanismsresponsibleforNBTIinpMOSFETswithHfNHfO_2gatestructure.OurfindingssuggestthattheNBTIdegradationismainlyattributedtothetrappingofpositivechargesinthegateoxideduringstress.Thesetrappedchargesleadtoashiftinthethresholdvoltageandadecreaseinthedraincurrent.Additionally,weinvestigatetheimpactoftrapstatesandinterfacestateso