N型高压DDDMOS热载流子损伤研究-豆柴文库

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N型高压DDDMOS热载流子损伤研究
Abstract:
Thispaperpresentsastudyonthethermal-inducedcarrierdamageofN-typehigh-voltageDDDMOSdevices.Theimpactofelevatedtemperaturesonthedevice'sreliabilityandperformanceareanalyzed.Theresultsindicatethatthethermalstressleadstosignificantincreasesintheon-resistanceandgateleakagecurrent,aswellasthedegradationoftheMOSFET'sbreakdownvoltage.Theobserveddegradationisattributedtocarriertrappingandgeneration,whichultimatelyleadstotheformationofhotspotsinthedevice'sactiveregion.ThestudyaimstodeepentheunderstandingofthethermalbehaviorofDDDMOSdevicesandprovideinsightsforfuturedevicedesignandoptimization.
Introduction:
Withtherapiddevelopmentofpowersemiconductordevices,thedemandforhigh-voltageandhigh-currentratingdeviceshasbecomemoreandmoreurgent.Thedouble-diffusedMOSFET(DDDMOS)hasemergedasapromisingcandidateduetoitslowon-resistance,highbreakdownvoltage,andgoodswitchingperformance.However,thereliabilityandthermalbehaviorofDDDMOSdeviceshavebecomeacriticalissuethatneedstobeaddressed.
ThethermalstressisoneofthemostsignificantfactorsaffectingthereliabilityandperformanceofDDDMOSdevices.Thethermal-inducedcarrierdamageintheactiveregionofthedevicecanleadtosignificantincreasesintheon-resistance,gateleakagecurrent,andthedegradationoftheMOSFET'sbreakdownvoltage.Therefore,itisessentialtoinvestigatethethermalbehaviorofDDDMOSdevicesunderdifferentoperatingconditions.
ExperimentalSetup:
TheN-typehigh-voltageDDDMOSdeviceswerefabricatedona6-inchwaferwithaprocesstechnologyof0.18μm.Thedevices'dimensionswere1.4mm×1.4mm,andthecellpitchwas8.4μm.Thedevice'sgatewasmadeofpolysilicon,andthegateoxidethicknesswas50nm.Thesourceanddraincontactsweremadeofaluminum,andthemetalthicknesswas0.6μm.Thedevicesweretestedunderdifferenttemperaturesanddifferentbiasconditions.
ResultsandDiscussion:
Thethermal-inducedcarrierdamageoftheN-typehigh-voltageDDDMOSdeviceswascharacterizedbymeasuringtheon-resistance,leakagecurrent,andbreakdownvoltageunderdifferenttemperaturesandbiasconditions.Theresultsindicateth