β-Ga_2O_3(100)面的CMP研究及优化-豆柴文库

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β-Ga_2O_3(100)面的CMP研究及优化
Abstract
TheresearchonChemicalMechanicalPolishing(CMP)ofβ-Ga_2O_3(100)hasbeenperformed.Inthisstudy,aslurryconsistingofcolloidalsilicaandhydrogenperoxidewasusedforpolishing.Theeffectsofdifferentparameterssuchaspolishingtime,pressure,rotationspeedandslurrycompositionwereinvestigatedtooptimizetheCMPprocess.Thesurfaceroughness(Ra)andmaterialremovalrate(MRR)weremeasuredtoevaluatetheeffectivenessofthepolishingprocess.Theresultsshowedthattheoptimalpolishingconditionswereachievedatapolishingtimeof10minutes,apressureof2psi,arotationspeedof60rpmandaslurrycompositionof5wt.%ofcolloidalsilicaand1vol.%ofhydrogenperoxide.Undertheseconditions,asurfaceroughnessof0.6nmandamaterialremovalrateof100nm/minwereobtained.
Introduction
β-Ga_2O_3isapromisingmaterialforpowerelectronicandoptoelectronicdevicesduetoitswidebandgap(4.8-5.3eV),highelectricalbreakdownfield(8-10MV/cm),andhighelectronmobility(200-400cm^2/Vs)[1,2].Torealizethefullpotentialofthismaterial,itisimportanttodevelopanefficientandreliableprocessforthefabricationofhigh-qualityβ-Ga_2O_3thinfilmsanddevices.
ChemicalMechanicalPolishing(CMP)isawidelyusedtechniqueforplanarizationandsurfacefinishingofvariousmaterialsinthesemiconductorandmicroelectronicsindustries[3].ThebasicprincipleofCMPistoremovematerialbythecombinedactionofchemicalandmechanicalforces.TheslurryusedinCMPtypicallyconsistsofabrasiveparticles,oxidizingagents,andsurfactants.Theabrasiveparticlesareresponsibleforthemechanicalremovalofmaterial,whiletheoxidizingagentsreactwiththesurfaceandenhancethechemicalremovalofmaterial.Thesurfactantsactasstabilizerstopreventagglomerationoftheabrasiveparticles.
Inthisstudy,weinvestigatetheCMPofβ-Ga_2O_3(100)usingaslurryconsistingofcolloidalsilicaandhydrogenperoxide.TheeffectsofdifferentpolishingparametersonthesurfaceroughnessandmaterialremovalratearestudiedtooptimizetheCMPprocess.
ExperimentalDetails
Theβ-Ga_2O_3(100)samplesusedinthisstudywerepreparedbythermalannealingofGaN(0001)substratesinanoxygenatmosphereat95