45nm PCRAM对GST CMP的挑战和解决方法-豆柴文库

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45nmPCRAM对GSTCMP的挑战和解决方法
Introduction
Phasechangerandomaccessmemory(PCRAM)isapromisingtechnologythathasbeenidentifiedasapotentialsuccessortoflashmemory.OneofthekeyadvantagesofPCRAMisitshighspeedandendurance,whichmakeitsuitableforapplicationinhigh-performancecomputingsystems.However,themanufactureof45nmPCRAMdevicesthatuseGermaniumAntimonyTellurium(GST)materialspresentsasignificantchallenge.ThisisbecausetheGSTmaterialhaspoorwettabilityandisdifficulttopolishusingconventionalchemicalmechanicalpolishing(CMP)processes.Inthispaper,wediscussthechallengesofmanufacturing45nmPCRAMusingGSTmaterialsandproposesomesolutions.
Challenges
Oneofthemainchallengesofmanufacturing45nmPCRAMusingGSTmaterialsisthelowadhesionandaffinityofGSTtothesubstrate.Thismeansthatitisdifficulttoachieveauniformandsmoothsurface,whichisnecessaryforthedepositionofthesubsequentlayersofthedevice.ThisproblemisfurthercompoundedbythefactthattheGSTmaterialalsohasahighetchingrate,whichmakesitdifficulttocontrolthethicknessofthedevicelayersaccurately.
AnotherchallengeofGSTCMPistherequirementforhighselectivity,i.e.,theabilitytoselectivelyremovetheGSTmaterialwithoutdamagingtheunderlyinglayers.Thisisparticularlyimportantintheformationofmulti-layereddevices,wheretheremovalofasinglelayermayresultinthedamageordegradationoftheunderlyinglayers.
Solutions
ToaddressthechallengeoflowadhesionandaffinityofGSTtothesubstrate,variousstrategieshavebeenproposed.Oneofthemostpromisingsolutionsistheuseofathinadhesionlayersuchastitanium,tantalumortungstenbetweenthesubstrateandtheGSTmaterial.ThisadhesionlayerimprovesthewettabilityandaffinityoftheGSTmaterialtothesubstrate,andalsoreducesthesurfaceroughness.
ToachieveahighselectivityduringGSTCMP,severalapproacheshavebeenproposed.Oneapproachinvolvestheuseofselectiveetchingbymodifyingthechemicalcompositionoftheetchant.Forexample,ithasbeenshownthattheadditionofsmallamountsofhydrogenperoxidetotheetchantcansignificantlyimprovetheselectivityofGSTCMP.Anotherapproachinvolvestheuseofanetchstoplayersuc