一种应用于W-CDMA的单片InGaPGaAs HBT功率放大器(英文)-豆柴文库

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一种应用于W-CDMA的单片InGaPGaAsHBT功率放大器(英文)
Introduction
Inmoderncommunicationsystems,poweramplifiers(PAs)playanessentialroleintransmittingsignalpowertolongdistances,whileminimizingsignaldistortion,attenuationandinterference.Inthemobilecommunicationdomain,WidebandCodeDivisionMultipleAccess(W-CDMA)hasbecomeastandardmethodfortransmittingandreceivingdatapackets.Thispaperfocusesonthedesignandanalysisofasingle-chipInGaPGaAsHeterojunctionBipolarTransistor(HBT)poweramplifierforW-CDMAapplications.
OverviewofInGaPGaAsHBTs
InGaPGaAsHBTsareatypeofbipolarjunctiontransistors(BJTs)andareusedprimarilyforRadioFrequency(RF)poweramplificationapplications.Theyaremadebylayeringindiumgalliumphosphide(InGaP)ontopofgalliumarsenide(GaAs)toformaheterojunction.Theheterojunctionservesasbothanemitterandabaseinthebipolarjunctiontransistor,whileann-typeGaAslayeractsasacollector.ComparedtoconventionalBJTsandmetal-oxide-semiconductorfield-effecttransistors(MOSFETs),HBTsofferseveraladvantagesintermsoflowernoise,highergain,higherspeed,andhigherpowerefficiency.
DesignandImplementation
ThedesignoftheInGaPGaAsHBTpoweramplifierinvolvesseveralstepssuchasdeviceselection,circuittopology,andoptimizationofthebiasingandmatchingnetworks.Inthisparticularcase,asingle-chipHBTwaschosentominimizeinter-stagelossesandimprovepowerefficiency.Thecircuittopologyselectedwasthecommon-emitter(CE)mode,whichisknownforitshighvoltagegainandmaximumpoweroutput.Thebiasingnetworkwasoptimizedtoenhancethelinearity,efficiency,andstabilityoftheamplifierwhilethematchingnetworkwasdesignedtominimizeinsertionlossandmaximizepowerdeliveredtotheload.
ThedesigngoalsoftheInGaPGaAsHBTpoweramplifierweretogenerateanoutputpowerof27dBm,whilemaintaininga3dBfrequencybandwidthof1800MHzto2200MHz.UsingtheCEmodecircuittopology,asingle-stageamplifierwasdesignedwithagainof22dBandabiasvoltageof4volts.Theamplifierwasimplementedona14-pinSMTpackagewithseveralsurface-mountcomponentssuchasresistors,capacitors,andinductors.
PerformanceMeasurementsandResults
Afterfabricati