256×256PtSi红外焦平台CMOS读出电路设计-豆柴文库

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256×256PtSi红外焦平台CMOS读出电路设计
Introduction
Inrecentyears,thedevelopmentofinfraredimagingtechnologyhasbecomeincreasinglyimportantinvariousfieldssuchasaerospace,military,medicalandindustrialapplications.Asakeycomponentofinfrareddetectors,theinfraredfocalplanearray(IRFPA)isresponsibleforcapturingandconvertingincominginfraredradiationintoelectricalsignals.ThereadoutcircuitisanimportantpartoftheIRFPA,whichcanconvertthesmallelectricalsignalscapturedbythepixelsintodigitalsignalsthatcanbeeasilyprocessed.
Inthispaper,wewillfocusonthedesignofaCMOSreadoutcircuitforthe256×256PtSiinfraredfocalplanearray.ThePtSiinfrareddetectorisapopularchoiceduetoitshighsensitivityandlownoise.Inaddition,the256×256arrayformatisacommonchoiceforcompactandcost-effectiveimagingsystems.Theproposedreadoutcircuitwillbedesignedinastandard0.18μmCMOSprocessandwillbeoptimizedforlownoise,highlinearity,andhighframerate.
DesignoftheReadoutCircuit
Thereadoutcircuitconsistsofaresetstage,asourcefollowerstage,andadifferentialamplifierstage.Theresetstageisresponsibleforresettingthepixelvoltagetoaknownvaluebeforethereadoutprocess.Thesourcefollowerstageamplifiesthepixelvoltageandreducestheinputimpedanceforthedifferentialamplifierstage.Thedifferentialamplifierstageamplifiestheoutputofthesourcefollowerstageandconvertsitintoadifferentialoutputsignal.
Theresetstageconsistsofap-typeMOSFETandan-typeMOSFETconnectedinseries.Thegateofthep-typeMOSFETisconnectedtotheinputvoltage.Thegateofthen-typeMOSFETisconnectedtotheresetvoltage.Whentheresetsignalishigh,then-typeMOSFETisturnedonandthepixelvoltageisresettotheresetvoltage.
Thesourcefollowerstageconsistsofap-typeMOSFETandan-typeMOSFETconnectedinseries.Thegateofthep-typeMOSFETisconnectedtothepixelvoltage.Thegateofthen-typeMOSFETisconnectedtothesourcevoltage.Whenthepixelvoltageishigherthanthesourcevoltage,then-typeMOSFETisturnedonandthep-typeMOSFETisturnedoff.Thisconfigurationactsasavoltagefollower,amplifyingthepixelvoltageandreducingtheinputimpedance.
Thedifferentialamplifierstageco