GaN-MOCVD反应室的CFD数值模拟计算-豆柴文库

您所在位置：网站首页 / GaN-MOCVD反应室的CFD数值模拟计算.docx / 文档详情

在线预览结束，喜欢就下载吧，查找使用更方便

5 金币

下载文档

/ 2

下载提示

如果您无法下载资料，请参考说明：

1、部分资料下载需要金币，请确保您的账户上有足够的金币

2、已购买过的文档，再次下载不重复扣费

3、资料包下载后请先用软件解压，在使用对应软件打开

文本预览

GaN-MOCVD反应室的CFD数值模拟计算
1.Introduction
Galliumnitride(GaN)isasemiconductormaterialthathasgainedsignificantattentioninrecentyearsduetoitspotentialtorevolutionizevariousfields,includinglighting,electronics,andenergy.OneofthemostcrucialprocessesintheproductionofGaNthinfilmsisthemetalorganicchemicalvapordeposition(MOCVD)process.InMOCVD,amixtureofgaseousprecursorsisallowedtoreactonaheatedsubstratetodepositanepitaxiallayer.Theprocessistypicallycarriedoutinareactor,suchasaverticalflowreactor,ahorizontalflowreactor,orarotatingdiscreactor.DuringtheMOCVDprocess,thereactionchambertemperature,flowrate,andgascompositionarecriticalparametersthatimpactthequalityandmorphologyofthedepositedGaNfilms.Theoptimalparameterscanbeobtainedthroughnumericalsimulationusingcomputationalfluiddynamics(CFD)tooptimizereactordesignsandoperatingconditions.Inthiswork,wewilldiscusstheCFDnumericalsimulationofaGaN-MOCVDreactionchamber.
2.CFDmodel
TheCFDmodelusedfortheGaN-MOCVDreactionchambersimulationisbasedonthecommercialsoftwareANSYSFluentversion18.2.Themodelcomprisestwo-andthree-dimensionalgeometriesofthereactorwithagasinletandanexhaustoutlet.Theinletandexhaustaremodeledaspressureboundaries,andthesubstrateandreactorwallsasno-slipwalls.TheCFDsimulationwasconductedinsteady-statemodewithalaminarandturbulentflowmodel.
ThegoverningequationsusedinthesimulationincludetheNavier-Stokes,continuity,andenergyequations.TheturbulencemodelusedinthesimulationistheReynolds-AveragedNavier-Stokes(RANS)andthek-εturbulencemodel.TheRANSmodelusedtoaccountfortheturbulenceisbasedontheuseofaturbulentvelocityfield,whilethek-εmodelisbasedontheBoussinesqapproximationtoaccountfortheturbulenceenergyandthedissipation.
3.Results
TheCFDsimulationresultsoftheGaN-MOCVDreactionchambershowthevelocity,pressure,andtemperaturedistributionswithinthereactor.Thevelocitydistributionindicatesthatthegasflowishighlyturbulentandnon-uniform.Thevelocityprofileishighestneartheinletanddecreasesasitapproachestheoutlet.Thegaspressuredistributionindicatesth