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PSP基RF-MOSFET模型库的开发
Title:DevelopmentofRF-MOSFETModelLibraryforPSPICE
Abstract:
Inrecentyears,thedemandforhigh-frequencyandhigh-powerRFintegratedcircuitshasbeenincreasingrapidly.Therefore,accuratemodelingofRFdevices,suchasRF-MOSFETs,isessentialforthedesignandsimulationofthesecircuits.ThispaperpresentsthedevelopmentofacomprehensiveRF-MOSFETmodellibraryspecificallydesignedforthePSPICEsimulator.
Introduction:
RF-MOSFETsarewidelyusedinvariousRFapplicationsduetotheirexcellenthigh-frequencyperformance,lowpowerconsumption,andintegrationcapabilities.ToaccuratelysimulateRFcircuits,itiscrucialtohavereliablemodelsforRF-MOSFETdevices.Traditionally,RF-MOSFETmodelsweredevelopedspecificallyforvarioussimulators,resultingindifferentmodelparametersandequations.Thislackofstandardizationmadeitdifficulttocompareorexchangemodelsbetweensimulators.Inthispaper,weproposethedevelopmentofaunifiedRF-MOSFETmodellibraryforthepopularPSPICEsimulator.
ModelDevelopment:
ThedevelopmentoftheRF-MOSFETmodellibraryinvolvesseveralstages.Firstly,datacollectionisperformedbycharacterizingactualRF-MOSFETdevicesthroughmeasurementsinacontrolledtestenvironment.Parameterssuchasgate-sourcecapacitance(Cgs),gate-draincapacitance(Cgd),andgate-sourceoverlapcapacitance(Cgs0)areextractedfromthemeasurements.
Next,anextensiveliteraturereviewhelpsidentifytheappropriatemodelequationsandparametersfortheRF-MOSFETs.VariousRF-MOSFETmodels,suchastheEKVmodel,BSIMmodel,andEnz-Krummenacher-Vittoz(EKV)model,areinvestigated.ThemostsuitablemodelequationsandparametersareselectedbasedontheiraccuracyandcompatibilitywiththePSPICEsimulator.
Oncethemodelequationsandparametersaredetermined,alibraryiscreatedintheformofsubcircuitsthatcanbeeasilyintegratedintothePSPICEsimulator.Thesubcircuitsincludethenecessarycomponentssuchasresistors,capacitors,andvoltage-controlledsources,alongwiththemodelequationsandparameters.
ValidationandVerification:
ToensuretheaccuracyandreliabilityofthedevelopedRF-MOSFETmodellibrary,extensivevalidationandverificationar