GaAlAsGaAs DH激光器的发光位置研究-豆柴文库

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GaAlAsGaAsDH激光器的发光位置研究
Abstract:
Inrecentyears,GaAlAsGaAsdoubleheterostructure(DH)lasershavebeenwidelyusedinvariousfieldsduetotheirexcellentperformanceandstableoperation.However,thelocationoftheemissionpointoftheDHlaserremainscontroversial,whichaffectsitsapplicationtosomeextent.Inthispaper,weinvestigatethepossibleemissionpositionsoftheGaAlAsGaAsDHlaserthroughtheoreticalanalysisandexperimentalverification.TheresultsshowthatthelocationoftheemissionpointiscloselyrelatedtothedopingconcentrationandthicknessoftheDHstructure,andtheoptimalemissionpositioncanbeachievedbyadjustingtheseparameters.
Introduction:
TheGaAlAsGaAsdoubleheterostructure(DH)laserisawidelyusedtypeofsemiconductorlaserduetoitshighperformanceandexcellentstability.TheDHstructureconsistsoftwodifferentsemiconductoralloys,withalowbandgapmaterialsandwichedbetweentwohighbandgapmaterials.Thisstructurecanconfinetheelectron-holepairsintheactivelayer,leadingtostimulatedemission.However,thelocationoftheemissionpointoftheDHlaserisstillcontroversial,andtheoptimalpositionisnotclearyet.Inthispaper,weaimtoinvestigatethepossibleemissionpositionsoftheGaAlAsGaAsDHlaserandprovideguidanceforitspracticalapplication.
Theory:
ThelocationoftheemissionpointoftheDHlaserisdeterminedbytheenergybandstructureandcarrierdistributionintheDHstructure.WhenanelectricfieldisappliedtotheDHstructure,electronsandholesareinjectedintotheactivelayer,wheretheyrecombineandemitphotons.Thelocationoftheemissionpointisrelatedtothedistributionofthecarriersintheactivelayer.
Accordingtotheoreticalcalculations,theemissionpositioncanbeshiftedbychangingthedopingconcentrationandthicknessoftheDHstructure.Foralowdopingconcentration,thecarriersaremainlydistributedneartheinterfaceoftheactivelayerandthecladdinglayer,resultinginalowemissionefficiency.Incontrast,forahighdopingconcentration,thecarriersareevenlydistributedintheactivelayer,leadingtoahighemissionefficiency.Moreover,thethicknessoftheactivelayeralsoaffectstheemissionposition.Athinneractivelayerresultsinalarg