Si-SiGe材料三维CMOS集成电路技术研究(英文)-豆柴文库

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Si-SiGe材料三维CMOS集成电路技术研究(英文)
ResearchonThree-dimensionalCMOSIntegratedCircuitTechnologyBasedonSi-SiGeMaterial
Abstract:
Inthefieldofmicroelectronics,thecontinuousdevelopmentofintegratedcircuittechnologyhasgreatlypromotedthedevelopmentofartificialintelligence,theInternetofThings,andotherindustries.Asanimportantmaterialinintegratedcircuittechnology,Si-SiGehasuniqueadvantagesindeviceperformance.BasedonthecharacteristicsofSi-SiGematerial,thispaperintroducesthebasicprinciplesandresearchprogressofthree-dimensionalCMOSintegratedcircuittechnology.Throughthediscussionofthelatestresearchachievements,wecanunderstandthepotentialofSi-SiGematerialinthefieldofintegratedcircuittechnology.
Keywords:Si-SiGematerial,Three-dimensionalCMOSintegratedcircuit,Deviceperformance
Introduction:
Si-SiGematerialisaternarycompoundmaterialcomposedofsilicon,germanium,andcarbonatoms.Comparedwithtraditionalsiliconmaterials,Si-SiGehasahighercarriermobilityandsmallerleakagecurrent,whichcaneffectivelyimprovetheperformanceofdevices.Therefore,Si-SiGematerialhasgraduallybecomeanimportantresearchdirectioninthefieldofmicroelectronics.Three-dimensionalCMOSintegratedcircuittechnologyisoneofthehotspotsinthecurrentresearchfieldofintegratedcircuittechnology.Bystackingmultipledevicelayersvertically,thechipareacanbeeffectivelyreduced,andthedeviceperformancecanbeimproved.Therefore,Si-SiGematerialhasbecomearesearchhotspotinthefieldofthree-dimensionalCMOSintegratedcircuits.
MainContent:
1.ThebasicprinciplesofSi-SiGematerials
Si-SiGeisacrystalmaterialwithadiamondstructure,anditslatticeconstantishigherthanthatofsilicon.TheadditionofgermaniumatomsinSi-SiGecaneffectivelyreducetheenergybandgapofthematerial,increasethecarriermobility,andreducethethresholdvoltageofthedevice.Inaddition,theincorporationofcarbonatomscaneffectivelyreducetheleakagecurrentofthematerial.Therefore,Si-SiGematerialhasexcellentdeviceperformanceandiswidelyusedinhigh-enddevices.
2.TheresearchprogressofSi-SiGematerialsinCMOSintegratedcircuits
Withtherapidd