标准CMOS工艺集成肖特基二极管设计与实现(英文)-豆柴文库

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标准CMOS工艺集成肖特基二极管设计与实现(英文)
DesignandImplementationofSchottkyDiodesusingStandardCMOSProcess
Schottkydiodes,alsoknownashotelectrondiodes,arewidelyusedinavarietyofapplicationssuchashigh-frequencyapplications,microwavecircuitsandpowerelectronics.Inthispaper,wewilldiscussthedesignandimplementationofSchottkydiodesusingastandardCMOSprocess.
Introduction
TheSchottkydiodeisaspecialtypeofdiodethatisbasedontheprincipleofrectification,whichinvolvesconvertingalternatingcurrent(AC)intodirectcurrent(DC).Unlikeordinaryp-njunctiondiodes,Schottkydiodesarebasedonametal-semiconductorjunctionratherthanap-njunction.Thisallowsthemtohavelowervoltagedropsandmuchfasterswitchingspeedsthanp-njunctiondiodes.
Design
ThedesignprocessforSchottkydiodesinvolvesdeterminingtheappropriatematerialsanddimensionsforthemetal-semiconductorjunction.Inthiscase,wewillbeusingastandardCMOSprocesswhichinvolvessiliconasthesemiconductormaterialandmetal(suchastungstenortitanium)asthecontactmaterial.
ThekeyparametersinthedesignofaSchottkydiodeincludetheareaofthemetal-semiconductorinterface,thethicknessofthemetallayer,andthedopingconcentrationofthesemiconductormaterial.Theareaofthemetal-semiconductorjunctiondeterminestheamountofcurrentthatcanflowthroughthediode,whilethethicknessofthemetallayerdeterminesthevoltagedropacrossthejunction.
Implementation
Oncethedesignparametershavebeendetermined,theSchottkydiodecanbeimplementedusingastandardCMOSprocess.Theprocessinvolvesseveralstepsincludingpreparingthesiliconwafer,depositingthemetallayer,andpatterningthemetallayertocreatetheSchottkycontact.
Afterthemetallayerhasbeendepositedandpatterned,thedevicecanbetestedtoverifyitsperformance.TheperformanceoftheSchottkydiodecanbecharacterizedusingseveralparametersincludingtheforwardvoltagedrop,thereverseleakagecurrent,andtheswitchingspeed.
Applications
Schottkydiodeshaveawiderangeofapplicationsinelectronics.Oneofthemostcommonapplicationsisinhigh-frequencyapplicationswheretheirfastswitchingspeedsmakethemidealforuseinradiofrequency(RF)cir