用于PDP扫描驱动芯片的低成本VDMOS及其兼容工艺(英文)-豆柴文库

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用于PDP扫描驱动芯片的低成本VDMOS及其兼容工艺(英文)
Low-CostVDMOSanditsCompatibleTechnologyforPDPScanningDriverChips
Introduction
Plasmadisplaypanel(PDP)technologyhasshowngreatpotentialindeliveringhigh-qualityimagesandbrightness.However,thecomplexityofitsdrivingcircuitryposesachallengetoitscost-effectiveness.Inthispaper,weproposealow-cost,verticaldouble-diffusedmetal-oxide-semiconductor(VDMOS)transistortechnologythatiscompatiblewithPDPscanningdriverchips.WediscusstheadvantagesofVDMOStechnologyanditscompatibilitywithscanningdriverchipsandpresentthedesignandsimulationresultsforaVDMOStransistor.
VDMOSTechnology
VDMOStechnologyisatypeofverticalinsulatedgatebipolartransistor(IGBT)thatiscommonlyusedinpowerelectronicsapplications.Itisahigh-voltage,high-currentdevicethatprovideslowon-stateresistance,high-speedswitching,andhighpowerdensity.VDMOStechnologyisusedinapplicationssuchasswitchingregulators,motorcontrol,andaudioamplifiers.TheVDMOSdeviceconsistsofap-dopedsubstrate,an-dopeddriftregion,andap-dopedchannel.Itiscoveredbyanoxidelayer,andagateelectrodeisformedontheoxidelayer.Thegateelectrodeiselectricallyinsulatedfromthesubstrateandthechannelbytheoxidelayer.
CompatibilitywithPDPScanningDriverChips
PDPscanningdriverchipsrequiretransistorsthatcanswitchatahighspeedandwithhighvoltageratings.VDMOStechnologymeetstheserequirementsandiscompatiblewiththescanningdriverchips.VDMOStransistorshavehighpowerdensityandcanhandlehighvoltagesandcurrents.TheVDMOStransistorcanalsobeeasilyintegratedontothescanningdriverchipduetoitsverticalstructure,whichmakesitpossibletoreducethesizeofthescanningdriverchip.
DesignandSimulationResults
WedesignedandsimulatedaVDMOStransistorusingtheSilvacoTCADsoftware.Thetransistorwasdesignedwitha2μmchannellength,a50μmdriftregion,anda2μmgateoxidethickness.Thedopingconcentrationofthesubstrateanddriftregionwere1x10^17cm^-3.Thegateelectrodewasdesignedwitha0.3μmthicknessofaluminum.
ThesimulationresultsshowthattheVDMOStransistorhasalowon-stateresistanceof15mΩ.Thedevicecanhandleamaximumvolta