基于0.13μm CMOS工艺的毫米波宽带LNA设计-豆柴文库

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基于0.13μmCMOS工艺的毫米波宽带LNA设计
Introduction:
Withtherapiddevelopmentofwirelesscommunicationtechnologies,thereisagrowingneedforhigh-speeddatatransmission,whichrequireshighfrequencybandsforbetterdatatransferrates.Millimeter-wave(MMW)frequencybands,rangingfrom30GHzto300GHz,aresuitableforhigh-speeddatatransfersandarewidelyusedinapplicationssuchasimagingandradarsystems.However,theuseofMMWfrequenciespresentschallengesindesigningtheradiofrequency(RF)front-endcomponents,suchasthelow-noiseamplifier(LNA).
TheLNAisacrucialcomponentoftheRFfront-end,asitamplifiestheweakinputsignalswithminimalnoiseaddedtothesignal.TheLNAdesignisparticularlychallengingintheMMWbandsduetothelowpoweroptionavailableandthenoisefigure(NF)requirement.
ThispaperexaminesthedesignofabroadbandLNAintheMMWband,usingthe0.13μmcomplementarymetal-oxide-semiconductor(CMOS)technology.Theaimofthisdesignistoachievehighgainandlownoisefigureoverawidefrequencyrange.
DesignMethodology:
TheLNAdesignfollowsacascadeoftwo-stagecommon-sourceamplifiers.TheinputsignalsarecoupledtothefirststageoftheLNAthroughamicrostrip-linetransformerwitha50Ωinputimpedance.ThefirststageLNAprovideshighgainandlownoiseoverawidefrequencyrange,anditsoutputiscoupledtothesecondstageLNAthroughacapacitor.ThesecondstageLNAprovidesfurtheramplificationofthesignalandimpedancematchingtotheoutputport.
ThetopologyoftheLNAisadual-feedback(DFB)structure,whichprovidesbetterstabilityandlowernoisefigurethanitscounterpart,thesingle-feedback(SFB)LNA.TheDFBLNAhasafeedbackloopbetweentheoutputandtheinputofthefirststageamplifier,andanotherfeedbackloopbetweentheoutputandtheinputofthesecondstageamplifier.
TheLNAisdesignedwiththe0.13μmCMOStechnology,whichprovideshightransconductanceandalownoisefigure.ThetransistorsizeusedintheLNAisoptimizedforawidebandwidth,andthelayoutisoptimizedforaminimumparasiticcapacitance.
SimulationResults:
TheperformanceofthedesignedLNAissimulatedusingtheCadenceSpectresimulationtool.ThesimulationresultsshowthattheLNAhasabandwidthof50GHzto100GHz,withagaino