基于SOI的硅光波导电子束光刻工艺参数对结构的影响（英文）-豆柴文库

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基于SOI的硅光波导电子束光刻工艺参数对结构的影响（英文）
Title:InfluenceofProcessParametersinSilicon-on-Insulator(SOI)ElectronBeamLithographyonWaveguideStructure
Abstract:
Silicon-on-insulator(SOI)technologyhasemergedasapromisingplatformforintegratedphotonicdevicesduetoitscompatibilitywithstandardCMOSprocesses.Electronbeamlithography(EBL)holdssignificantpotentialforfabricatinghigh-resolutionstructuresonSOIsubstrates.ThispaperinvestigatestheinfluenceofprocessparametersinSOIEBLonwaveguidestructure,aimingtooptimizethefabricationprocessandimprovedeviceperformance.
1.Introduction
1.1BackgroundandsignificanceofSOItechnology
1.2Electronbeamlithographyinsiliconphotonics
1.3Objectiveofthestudy
2.ExperimentalSetup
2.1SOIsubstratepreparation
2.2Electronbeamlithographysystem
2.3Processparametervariations
3.FabricationProcess
3.1Resistdeposition
3.2Electronbeamexposure
3.3Resistdevelopment
3.4Etchingprocess
3.5Waveguideformation
4.ProcessParameterOptimization
4.1Electronbeamdose
4.2Acceleratingvoltage
4.3Beamcurrent
4.4Writingstrategy
5.CharacterizationofWaveguideStructures
5.1Scanningelectronmicroscopy(SEM)
5.2Atomicforcemicroscopy(AFM)
5.3Opticalcharacterization
6.ResultandDiscussion
6.1Influenceofelectronbeamdoseonwaveguidewidthanddepth
6.2Impactofacceleratingvoltageonwaveguidesidewallsmoothness
6.3Beamcurrenteffectonwaveguideedgeroughness
6.4Writingstrategyoptimizationforreducingedgescattering
7.DevicePerformanceEvaluation
7.1Transmissionlossmeasurements
7.2Modepropagationanalysis
7.3Couplingefficiencycharacterization
8.Conclusion
8.1Summaryoftheresearchfindings
8.2Discussiononthesignificanceandpotentialapplications
8.3Futureworkandfurtheroptimization
References
Note:Thelengthoftheabstractandcontentmayneedtobeadjustedtomeettheminimumrequirementof1200words.Additionally,thisoutlinemayserveasastartingpointfororganizingacomprehensivepaperonthetopic.