基于增强电子传输的双层MXene半导体高性能n型薄膜晶体管（英文）-豆柴文库

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基于增强电子传输的双层MXene半导体高性能n型薄膜晶体管（英文）
Title:High-performancen-typeThin-FilmTransistorsBasedonEnhancedElectronTransportinBilayerMXeneSemiconductor
Abstract:
Thedevelopmentofhigh-performancethin-filmtransistors(TFTs)isessentialtoenableadvancedelectronicdevices.Inthispaper,wepresentanovelapproachtoachievinghigh-performancen-typeTFTsbyutilizingabilayerMXenesemiconductorwithenhancedelectrontransport.MXenes,aclassof2Dtransitionmetalcarbidesornitrides,haveattractedsignificantattentionduetotheiruniquepropertiesincludinghighconductivity,largesurfacearea,andtunableelectronicstructure.Inthisstudy,wefocusonutilizingMXenematerialsastheactivesemiconductorlayerinTFTdevices.
Introduction:
Thin-filmtransistors(TFTs)playakeyroleinmodernelectronics,actingasthebasicbuildingblocksforvariouselectronicdevicessuchasdisplays,sensors,andintegratedcircuits.AchievinghighperformanceinTFTsreliesonthedevelopmentofmaterialswithsuperiorelectronicproperties,particularlyintermsofcarriermobilityandon-offratio.WhiletraditionalTFTmaterialslikeamorphoussiliconandorganicsemiconductorshavemadesignificantprogress,thereisacontinuousneedfornewsemiconductingmaterialswithenhancedperformance.
MXenesareapromisingclassof2Dmaterialsthathaverecentlyemergedaspotentialcandidatesforhigh-performanceelectronicdevices.Thesematerialspossessuniquepropertiessuchashighelectricalconductivity,excellentmechanicalflexibility,andchemicalstability.MXenesarecomposedoftransitionmetalcarbidesornitrides,whichcanbeeffectivelydelaminatedinto2Dlayeredstructures.Theexfoliationprocessresultsinahighspecificsurfacearea,whichfacilitateschargecarriertransportintheMXenelayers.
Methods:
Inthisstudy,wepreparedbilayerMXenethinfilmsusingasimpleandscalablesolution-basedmethod.TheMXeneflakesweredispersedinasolvent,andtheresultingsuspensionwasdrop-castontoasubstrateandthenannealedtoformathinfilm.ThebilayerstructurewasachievedbysequentiallydepositingtwoMXenelayerswithdifferentcompositions.ThisbilayerconfigurationhasbeenfoundtoenhanceelectrontransportinMXene