基于高温抗辐照SOI CMOS工艺的器件特性研究（英文）-豆柴文库

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基于高温抗辐照SOICMOS工艺的器件特性研究（英文）
Title:InvestigationofDeviceCharacteristicsbasedonHigh-TemperatureandRadiation-ResistantSOICMOSTechnology
Abstract:
Thefieldofsemiconductordevicetechnologyhaswitnessedsignificantadvancementsinrecentyears,particularlyintheareaofhigh-temperatureandradiation-resistantdevices.Thispaperpresentsanin-depthinvestigationintothecharacteristicsofdevicesfabricatedusinghigh-temperatureandradiation-resistantSOICMOStechnology.Thestudyfocusesonunderstandingthekeypropertiesofthesedevicesandtheirsuitabilityforapplicationsinextremeenvironments.
1.Introduction:
Inharshenvironmentsexposedtohightemperaturesandradiation,electronicdevicesmustpossessrobustcharacteristicstoensurereliableoperation.Silicon-on-insulator(SOI)complementarymetal-oxide-semiconductor(CMOS)technologyhasemergedasapromisingsolutionforsuchapplicationsduetoitsinherentbenefitsofreducedparasiticeffects,improvedradiationresistance,andhigh-temperaturestability.ThispaperaimstoanalyzethedevicecharacteristicsofSOICMOStechnologyinextremeoperatingconditions,suchashightemperaturesandradiation.
2.High-TemperatureOperation:
Thefirstpartofthestudyfocusesontheinvestigationofdevicecharacteristicsunderhigh-temperatureconditions.Variousparameters,includingthresholdvoltage,leakagecurrent,carriermobility,anddevicereliability,areanalyzedatdifferenttemperatureranges.TheimpactoftemperatureontheperformanceandstabilityofSOICMOSdevicesisevaluatedusingexperimentaldataandadvancedsimulationtechniques.
3.RadiationEffectsonDevicePerformance:
ThesecondpartoftheresearchdelvesintotheeffectsofradiationontheperformanceofSOICMOSdevices.Radiationcancauseionizationeffects,displacementdamage,anddegradationofdeviceperformance.Theimpactofradiationonvariousdeviceparameters,suchasthresholdvoltageshift,subthresholdleakagecurrent,andtransienteffects,isinvestigated.Additionally,techniquessuchasradiationhardeningbydesign(RHBD)andtheuseofradiation-resistantmaterialsareexploredtomitigatethenegativeeffectsofradiationondeviceperformance.
4.Devi