用于太赫兹成像的CMOS肖特基二极管三维结构研究（英文）-豆柴文库

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用于太赫兹成像的CMOS肖特基二极管三维结构研究（英文）
Title:StudyonThree-DimensionalStructureofCMOSSchottkyDiodesforTerahertzImaging
Abstract:
Terahertz(THz)imaginghasgainedsignificantattentioninvariousfieldssuchasmedicine,security,andmaterialcharacterization.TheabilitytodetectandimageobjectsusingTHzwaveshasthepotentialtorevolutionizenumerousindustries.Inrecentyears,CMOSSchottkydiodeshaveemergedaspromisingdevicesforTHzimagingduetotheircompatibilitywithintegratedcircuittechnology.Thispaperfocusesontheresearchconductedtounderstandandoptimizethethree-dimensionalstructureofCMOSSchottkydiodesforefficientTHzimaging.
1.Introduction
Terahertzimaging,operatinginthefrequencyrangebetween0.1and10THz,offersuniqueadvantagessuchasnon-ionizingradiation,high-resolutionimaging,andtheabilitytopenetratevariousmaterials.CMOSSchottkydiodes,knownfortheirfastresponseandlowcost,havegarneredattentionaspotentialTHzdetectors.ThissectionprovidesanoverviewofTHzimagingandthemotivationbehindusingCMOSSchottkydiodesforthispurpose.
2.Three-DimensionalStructureDesignandFabrication
ThissectiondelvesintothedetaileddesignconsiderationsandfabricationtechniquesforCMOSSchottkydiodes.Factorssuchasdiodearea,metal-semiconductorcontact,anddiodethicknessareexplored.Variousmaterialsandprocessesfordiodefabricationareevaluatedtooptimizethedeviceperformance.
3.CharacterizationandMeasurementTechniques
ToevaluatetheperformanceofCMOSSchottkydiodesforTHzimaging,asetofcharacterizationandmeasurementtechniquesareessential.Thissectiondiscussesthemethodologiesusedtoassessthediode'selectricalproperties,responsivity,noise,andimagingcapability.Techniquessuchascurrent-voltagemeasurements,timedomainspectroscopy,andTHzimagingsetupsaredescribed.
4.OptimizationofCMOSSchottkyDiodesforTHzImaging
Basedonthefindingsfromthecharacterizationandmeasurementtechniques,thissectionfocusesontheoptimizationofCMOSSchottkydiodesforTHzimaging.Strategiessuchasmaterialselection,processoptimization,andstructuralmodificationsareexplored.Theimpactofeachoptimizationtechniqueisinv