直流断路器半导体组件内母排电感对并联IGBT关断特性的影响及其结构优化-豆柴文库

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直流断路器半导体组件内母排电感对并联IGBT关断特性的影响及其结构优化
Title:TheInfluenceofMother-BusInductorontheTurn-offCharacteristicsofParallelIGBTsinDCCircuitBreakersanditsStructuralOptimization
Abstract:
DCcircuitbreakersarecrucialcomponentsindirectcurrentpowersystemsastheyprotectthesystemfromovercurrentandshort-circuitfaults.TheuseofInsulatedGateBipolarTransistors(IGBTs)asswitchingdevicesinDCcircuitbreakershasgainedsignificantattentionduetotheirhighpowerhandlingcapacityandfastswitchingcapability.However,thepresenceofparasiticcomponents,suchasthemother-businductor,canaffecttheturn-offcharacteristicsoftheIGBTs.Thispaperinvestigatestheimpactofthemother-businductorontheturn-offcharacteristicsofparallelIGBTsandproposesastructuraloptimizationformitigatingtheassociateddrawbacks.
1.Introduction:
DCcircuitbreakersplayavitalroleinensuringthesafeoperationofdirectcurrentpowersystems.Theyareresponsibleforinterruptingtheflowofcurrentintheeventofovercurrentorshort-circuitfaults.Solid-stateDCcircuitbreakersbasedonIGBTsoffernumerousadvantages,includingfastswitchingspeed,lowpowerloss,andcompactsize.However,thepresenceofparasiticcomponents,suchasthemother-businductor,cansignificantlyaffecttheturn-offcharacteristicsoftheIGBTs,leadingtovariousperformanceissues.
2.InfluenceofMother-BusInductoronIGBTTurn-offCharacteristics:
Themother-businductor,whichisconnectedinparalleltotheIGBTmodule,isusedtosuppressthevoltagespikesduringswitchingandlimittherateofriseofthecurrent.However,itintroducesseveraladverseeffectsontheturn-offtransitionoftheIGBTs.Theseeffectsincludeincreasedturn-offtime,voltageovershoot,ringing,andincreasedpowerloss.Theincreasedturn-offtimeisprimarilyattributedtotheenergystoredinthemother-businductor,whichdelaysthedischargeoftheIGBTmoduleduringturn-off.Thevoltageovershootandringingarecausedbytheinductiveenergyrelease,leadingtohigherstressontheIGBTs.Moreover,theincreasedpowerlossreducestheoverallefficiencyofthecircuitbreaker.
3.StructuralOptimizationforEnhancingIGBTTurn-offPerformance:
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