考虑寄生参数的高压GaN功率放大器漏极调制电路分析（英文）-豆柴文库

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考虑寄生参数的高压GaN功率放大器漏极调制电路分析（英文）
Title:AnalysisofHighVoltageGaNPowerAmplifierDrainModulationCircuitwithParasiticParametersConsideration
Abstract:
Inrecentyears,GalliumNitride(GaN)technologyhasemergedasapromisingcandidateforhigh-powerandhigh-frequencyapplicationsduetoitsexcellentpropertiessuchashighbreakdownvoltage,highelectrondensity,andhighthermalconductivity.GaNpoweramplifiers(PAs)arecrucialcomponentsinvariouscommunicationandradarsystems.Toachievehigh-efficiencyoperation,thedrainmodulationcircuitplaysacrucialroleincontrollingtheoutputpowerandsignalintegrityoftheamplifier.However,thepresenceofparasiticparameterssuchasinductance,capacitance,andresistancecansignificantlyaffecttheperformanceofthedrainmodulationcircuit.Thispaperpresentsanin-depthanalysisofthehighvoltageGaNpoweramplifierdrainmodulationcircuitconsideringtheinfluenceoftheseparasiticparameters.
1.Introduction
-BriefoverviewofGaNtechnologyanditsadvantagesinpoweramplification
-ImportanceofthedrainmodulationcircuitinGaNpoweramplifiers
2.GaNPowerAmplifierStructure
-OverviewofGaNpoweramplifierstructureandoperation
-Introductiontothedrainmodulationcircuitanditsroleinpowercontrol
3.ParasiticParametersinDrainModulationCircuit
-Explanationofparasiticinductance,capacitance,andresistanceinthedrainmodulationcircuit
-Impactofparasiticparametersonthedrainmodulationcircuitperformance
4.AnalysisofParasiticInductance
-Mathematicalmodelingofparasiticinductanceanditsimpactonamplifiergainandstability
-Techniquesforreducingparasiticinductanceeffects
5.AnalysisofParasiticCapacitance
-Modelingofparasiticcapacitanceanditseffectonthedrainmodulationcircuitbandwidth
-Strategiestominimizetheimpactofparasiticcapacitance
6.AnalysisofParasiticResistance
-Impactofparasiticresistanceonpowerdissipationandefficiencyofthedrainmodulationcircuit
-Approachestominimizetheinfluenceofparasiticresistance
7.CircuitDesignConsiderations
-Designguidelinesforminimizingtheimpactofparasiticparametersonthedrainmodulationcircuitperformance
-Optimizationtechniq