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GaAs基大功率半导体激光器的研究进展 Title:ResearchProgressonGaAs-BasedHigh-PowerSemiconductorLasers Introduction: GaAs-basedhigh-powersemiconductorlasershavegainedsignificantattentionfortheirwiderangeofapplicationsinoptoelectronicdevices,includingopticalcommunicationsystems,lasermachining,medicalinstrumentation,anddefensesystems.Thecontinuouseffortsintheirresearchanddevelopmenthaveresultedinremarkableprogress,aimingtoenhancetheirefficiency,reliability,andpoweroutput.ThispaperprovidesanoverviewoftherecentresearchadvancementsinGaAs-basedhigh-powersemiconductorlasers. 1.GaAsSubstrateGrowthTechniques: ThechoiceofanappropriateGaAssubstrategrowthtechniqueplaysacrucialroleindeterminingthestructuralqualityandopticalpropertiesofsemiconductorlasers.MolecularBeamEpitaxy(MBE)andMetalOrganicVaporPhaseEpitaxy(MOVPE)arewidelyusedtechniquesforgrowingGaAssubstrates.Recentstudieshavefocusedonenhancingsubstratequalitythroughoptimizationsinepitaxialgrowthparameters,suchastemperature,growthrate,anddopinglevel,toreducedefectsandimprovematerialquality. 2.ImprovedWaveguideDesigns: Waveguidedesignplaysacrucialroleindeterminingtheperformanceofhigh-powersemiconductorlasers.Severalinnovativeapproacheshavebeenproposedandimplemented,includingasymmetricwaveguidedesign,ridgewaveguidestructures,andtaperedwaveguides.Thesedesignshelpreduceopticallosses,enhancelightconfinement,andimprovebeamquality,resultinginimprovedlaserperformance. 3.ActiveRegionEngineering: ActiveregionengineeringinvolvesmanipulatingthecompositionanddopingoftheactivelayersinGaAslaserstooptimizetheirperformance.Thistechniqueallowsforthereductionofnon-radiativerecombinationprocessesandminimizationofquantumdefect.Recentadvancesinthisareaincludetheadoptionofquantumdotsandquantumwells,whichofferimprovedcarrierconfinementandreducedaugmentedspontaneousemission. 4.ThermalManagement: Effectivethermalmanagementisessentialforhigh-powersemiconductorlaserstomaintainstableoperationandimprovetheirreliability.Recentresearchhasfocusedondevelopingadvancedheatdissi
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