In_2O_3的掺杂及气敏性能研究-豆柴文库

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In_2O_3的掺杂及气敏性能研究
Title:DopingandGas-SensingPerformanceStudyofIn2O3
Abstract:
In2O3,alsoknownasindium(III)oxide,iswidelyrecognizedasahighlypromisingmetaloxidesemiconductormaterialduetoitsoutstandingproperties,suchashighelectricalconductivity,chemicalsensitivity,andstabilityathightemperatures.Inrecentyears,researchershavebeenfocusingonthestudyofdopingtechniquestoenhanceitsgas-sensingperformance.Thispaperaimstoprovideanoverviewofthedopingmethodsemployedinachievingimprovedgas-sensingpropertiesofIn2O3andhighlighttherecentadvancementsinthisfield.
Introduction:
In2O3isap-typesemiconductor,whichmakesithighlysuitableforgassensorapplications.However,itssensitivityandselectivitytodifferentgasescanbeenhancedbyproperdopingtechniques.Dopingreferstotheintentionalintroductionofimpuritiesintoamaterialtomodifyitselectrical,optical,orchemicalproperties.Dopingmethodssuchaswetimpregnation,sol-gel,chemicalvapordeposition,andsolid-statereactionhavebeenextensivelystudiedforIn2O3toachievebettergas-sensingperformance.
DopingTechniquesforIn2O3:
1.Zincoxide(ZnO)doping:ZnOisoneofthemostcommonlyuseddopantsforIn2O3.IthasbeenfoundthatZnOdopingincreasesthesensitivitytowardsreducinggasessuchasCOandH2duetoanincreaseinthenumberofoxygenvacancies.Theenhancedgas-sensingperformancecanbeattributedtotheformationofaheterojunctionbetweenIn2O3andZnO,whichpromotestheadsorptionanddesorptionofgasmolecules.
2.Tindioxide(SnO2)doping:SnO2dopingisanothereffectivetechniquetoimprovethegas-sensingpropertiesofIn2O3.TheSnO2dopantintroducesadditionaloxygenvacancies,whichfurtherenhancesthesurfacereactivityandgasadsorptioncapacityofIn2O3.RecentstudieshaveshownthatSnO2dopingsignificantlyimprovesthesensitivityandselectivityofIn2O3-basedgassensorstowardsvariousgases,suchasNO2,NH3,andhydrocarbons.
3.Transitionmetaloxidedoping:DopingIn2O3withtransitionmetaloxides,suchasFe2O3,NiO,andCo3O4,hasalsobeeninvestigatedtoenhanceitsgas-sensingperformance.ThetransitionmetaloxidescreatenewdefectsitesandenhancethegasreactivityofIn2O3,leading