GaZnO薄膜晶体管在紫外探测中的性能研究-豆柴文库

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GaZnO薄膜晶体管在紫外探测中的性能研究
Title:PerformanceInvestigationofGaZnOThinFilmTransistorsforUltravioletDetection
Abstract:
ThispaperpresentsacomprehensivestudyontheperformanceofGaZnOthinfilmtransistors(TFTs)forultraviolet(UV)detection.ThewidebandgapandhighopticaltransparencyofGaZnOmakeitapromisingmaterialforUVsensingapplications.Themainobjectiveofthisresearchistocharacterizeandanalyzethekeyperformanceparameters,includingresponsivity,quantumefficiency,stability,anduniformityofGaZnOTFTsinUVdetection.
Introduction:
Ultravioletradiationisknowntohavesignificanteffectsonvariousmaterialsandbiologicalsystems.Therefore,theneedforefficientandreliableUVsensorshasgrownrapidly.GaZnO,aternarycompoundofgallium(Ga),zinc(Zn),andoxygen(O),offersuniquepropertiesthatmakeitattractiveforUVdetection.ThisstudyaimstoinvestigatetheperformanceofGaZnOTFTsaspotentialUVsensors.
ExperimentalProcedure:
Inthisstudy,GaZnOthinfilmsweredepositedonasubstrateusingapulsedlaserdepositiontechnique.VariousTFTstructureswerefabricatedbydepositingsource,drain,andgateelectrodesontheGaZnOthinfilm.ThedevicesweresubjectedtoextensivecharacterizationteststoevaluatetheirUVdetectionperformance.
ResultsandDiscussion:
TheresponsivityoftheGaZnOTFTswasmeasuredusingacalibratedUVlightsource.Theresponsivityvalueswerefoundtobehigh,indicatingthedevice'sabilitytoconvertincidentUVlightintoelectricalsignals.Moreover,thequantumefficiencyoftheTFTswasanalyzedtodeterminethedevice'sabilitytoconvertphotonsintochargecarriers.Theresultsshowedahighquantumefficiency,furtherdemonstratingthepotentialofGaZnOTFTsforUVdetection.
Furthermore,thestudyexaminedthestabilityoftheGaZnOTFTsunderprolongedUVexposure.Itwasobservedthatthedevicesexhibitedexcellentstableperformance,suggestingtheirsuitabilityforlong-termUVsensingapplications.Additionally,theuniformityoftheTFTswasinvestigatedbyanalyzingthevariationinresponsivityacrossdifferentareasofthedevicesurface.Theresultsshoweduniformresponsivitydistribution,highlightingtheuniformperformanceoftheGaZnOTFTs.
Conclusio