p-GaN与NiPt欧姆接触的研究-豆柴文库

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p-GaN与NiPt欧姆接触的研究
Title:InvestigationofOhmicContactsbetweenp-GaNandNiPt
Abstract:
ThedevelopmentofefficientOhmiccontactsiscrucialfortheoptimizationofsemiconductordeviceperformance.Inthisstudy,weinvestigatetheOhmiccontactsbetweenp-GaNandNiPt.Thepurposeistoanalyzetheelectricalpropertiesandinterfacecharacteristicsofthiscontactsystem.Fabricationtechniques,electricalmeasurements,andmaterialanalysistechniquesareemployedtoexaminethecontactperformance.TheresultsprovidevaluableinsightsforthedevelopmentofimprovedOhmiccontactsinp-GaN-baseddevices.
Introduction:
Galliumnitride(GaN)isawide-bandgapsemiconductormaterialthathasfoundnumerousapplicationsinelectronicandoptoelectronicdevices.However,achievinglow-resistanceOhmiccontactstop-typeGaNremainschallenging.Ohmiccontactsarecrucialforensuringefficientcurrentinjectionandextractioninelectronicdevices,suchaslight-emittingdiodes(LEDs)andhigh-powertransistors.ThechoiceofOhmiccontactmaterialandthedesignofthecontactstructuresignificantlyimpactthedeviceperformance.Inthisstudy,wefocusoninvestigatingthepropertiesofOhmiccontactsbetweenp-GaNandNiPt.
ExperimentalMethodology:
ToinvestigatetheOhmiccontactsbetweenp-GaNandNiPt,thefollowingexperimentalmethodologyisemployed:
1.SamplePreparation:p-GaNlayersaregrownonaGaNtemplateviametal-organicchemicalvapordeposition(MOCVD).Thep-typedopingisachievedusingmagnesium(Mg).TheNiPtOhmiccontactmetalisdepositedonthep-GaNsurfacethroughphysicalvapordeposition(PVD).
2.ElectricalMeasurements:Current-voltage(I-V)measurementsareperformedtocharacterizetheelectricalpropertiesofthep-GaN/NiPtcontacts.Specificcontactresistivity(ρc)iscalculatedusingthetransmissionlinemethod(TLM).Temperature-dependentmeasurementsareperformedtostudythethermalstabilityoftheOhmiccontacts.
3.MaterialAnalysis:Scanningelectronmicroscopy(SEM)isusedforsamplesurfacemorphologyanalysis.Energy-dispersiveX-rayspectroscopy(EDS)isemployedtoanalyzethechemicalcompositionofthep-GaN/NiPtinterfaces.X-raydiffraction(XRD)analysisprovidesinformationonthecrysta