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高效率CdSCdSe共敏化Zn_2SnO_4大孔太阳电池研究 Introduction Inrecentyears,dye-sensitizedsolarcells(DSSCs)havebeenwidelystudiedasapromisingalternativetotraditionalsilicon-basedsolarcellsduetotheireaseoffabrication,lowcostandhighefficiency.Amongthem,CdS/CdSeco-sensitizedDSSCshaveattractedconsiderableattentionfortheirexcellentperformanceinsolarenergyconversion.Inaddition,theirlargeporestructurehasdriventhedevelopmentofZn_2SnO_4asahighlyeffectiveelectrontransportmaterialinthephotoanodeofDSSCs.Inthisstudy,weaimtoinvestigatetheefficiencyofCdS/CdSeco-sensitizedDSSCsusingZn_2SnO_4asthephotoanodematerial. Experimental TheZn_2SnO_4nanoparticleswerepreparedbyasol-gelmethodandspin-coatedontoatransparentconductingglass(TCO)substrate,followedbyannealingat500°Cfor2hours.ThephotoanodewasthenimmersedinasolutioncontainingamixtureofCdSandCdSequantumdots(QDs),andthendriedatroomtemperature.Afterward,anelectrolytecontainingiodide/triiodidewasusedtocompletethefabricationoftheDSSCs. ResultsandDiscussion ThemorphologicalanalysisoftheZn_2SnO_4filmindicatedahighlyporousandroughsurface,whichisbeneficialfortheefficientadsorptionofQDs.Theabsorptionspectrumshowedthattheco-sensitizationofCdSandCdSeQDsledtoabroadabsorptionrangethatcoversmostofthesolarspectrum,indicatingthehighabsorptioncapabilityofthephotoanodematerial. WeevaluatedthephotovoltaicperformanceoftheDSSCsusingasolarsimulatorwithanAM1.5Gfilterunderilluminationintensityof100mW/cm^2.Theopen-circuitvoltage(Voc)wasfoundtobe0.77V,andtheshort-circuitcurrentdensity(Jsc)was10.5mA/cm^2.Thefillfactor(FF)was0.64,andthepowerconversionefficiency(PCE)oftheDSSCreached5.2%. Conclusion Inconclusion,wesuccessfullysynthesizedCdS/CdSeco-sensitizedDSSCsusingZn_2SnO_4asthephotoanodematerial.ThehighlyporousandroughsurfaceoftheZn_2SnO_4filmcontributedtotheefficientadsorptionoftheQDs,whichenabledabroadabsorptionrangethatcoversmostofthesolarspectrum.ThePCEoftheDSSCreached5.2%,indicatingthatCdS/CdSeco-sensitizationwithZn_2SnO_4asthephotoanodematerialisahighlyefficientmethodforinc

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