SiC SBD和MESFET的抗辐照特性研究-豆柴文库

您所在位置：网站首页 / SiC SBD和MESFET的抗辐照特性研究.docx / 文档详情

在线预览结束，喜欢就下载吧，查找使用更方便

5 金币

下载文档

/ 2

下载提示

如果您无法下载资料，请参考说明：

1、部分资料下载需要金币，请确保您的账户上有足够的金币

2、已购买过的文档，再次下载不重复扣费

3、资料包下载后请先用软件解压，在使用对应软件打开

文本预览

SiCSBD和MESFET的抗辐照特性研究
Title:StudyontheRadiationTolerancePropertiesofSiCSchottkyBarrierDiodes(SBD)andMESFET
Abstract:
SiliconCarbide(SiC)devicesarebecomingincreasinglyimportantinawiderangeofapplicationsduetotheiruniqueproperties,suchashigh-temperatureoperation,highpowerdensity,andhighradiationtolerance.ThispaperaimstoinvestigateandcomparetheradiationtolerancecharacteristicsofSiCSchottkyBarrierDiodes(SBD)andMetal-SemiconductorField-EffectTransistors(MESFET).
Introduction:
Withtherapiddevelopmentofspaceandnucleartechnology,thereisagrowingdemandforelectronicdevicesthatcanwithstandhighradiationenvironments.Traditionalsilicon-baseddevicesfacesignificantchallengesinsuchconditions,astheyexhibitdegradationandfailureduetotheionizingeffectsofradiation.Inthiscontext,SiCdeviceshaveemergedaspromisingalternativesduetotheirinherentradiationtoleranceproperties.
RadiationEffectsonSiCDevices:
Radiationcaninducevariouseffectsonsemiconductordevices,includingdisplacementdamage,interface-trappedcharges,andtrappedspacecharges.Theseeffectscancausechangesinelectricalperformance,suchasincreasedleakagecurrent,reducedbreakdownvoltage,anddecreasedcarriermobility.TheradiationtoleranceofSiCdevicesisattributedtotheirwidebandgap,strongbondenergy,andhighbulkresistivity,whichenablethemtoeffectivelyresistradiation-induceddefects.
RadiationToleranceofSiCSchottkyBarrierDiodes:
SiCSBDsarewidelyusedinpowerelectronicsduetotheirhighthermalconductivity,lowforwardvoltagedrop,andfastswitchingspeed.ResearchhasshownthatSiCSBDsexhibitexcellentradiationtolerancecharacteristicscomparedtotraditionalsilicon-baseddiodes.ThewidebandgapofSiCensuresminimaldisplacementdamageandnegligibleinterfacetrappedcharges,therebymaintainingdeviceperformanceevenafterexposuretohighradiationdoses.Additionally,SiCSBDsarelesssusceptibletodegradationinreverserecoverycharacteristics,makingthemsuitableforapplicationsinspaceandnuclearenvironments.
RadiationToleranceofSiCMESFETs:
SiCMESFETsarehigh-frequencydevicesthatofferexcellentperformancein