基于Si Ge量子点实现增强F-N隧穿的低压闪速存储器(英文)-豆柴文库

您所在位置：网站首页 / 基于Si Ge量子点实现增强F-N隧穿的低压闪速存储器(英文).docx / 文档详情

在线预览结束，喜欢就下载吧，查找使用更方便

5 金币

下载文档

/ 2

下载提示

如果您无法下载资料，请参考说明：

1、部分资料下载需要金币，请确保您的账户上有足够的金币

2、已购买过的文档，再次下载不重复扣费

3、资料包下载后请先用软件解压，在使用对应软件打开

文本预览

基于SiGe量子点实现增强F-N隧穿的低压闪速存储器(英文)
Introduction
Withtheincreasinglyhighdemandsforfasterandlargerstorageinmoderncomputing,flashmemoryhasbecomeanessentialcomponentintheindustry.However,theconventionalflashmemoryislimitedbyitshighprogrammingvoltage,whichincreasesthepowerconsumptionandharmsthereliabilityofthedevice.Inrecentyears,low-voltageflashmemoryhasemergedasapromisingsolution,withitsuniquedesignbasedonFowler-Nordheim(F-N)tunnellingmechanism.
Inthispaper,wewillexploretheconceptofSiGequantumdotstoenhanceF-Ntunnellingandrealiselow-voltageflashmemory.Wewillfirstintroducethebasicprincipleoflow-voltageflashmemoryandthechallengesitfaces.WewillthendescribethepropertiesofSiGequantumdotsandtheirpotentialapplicationinflashmemory.Finally,wewillprovideasummaryofrecentprogressinthisfieldandourperspectivesonfutureresearchdirections.
Low-VoltageFlashMemoryandItsChallenges
Low-voltageflashmemoryisatypeofnon-volatilememorythatusesF-Ntunnellingtoprogramanderasethememorycells.F-Ntunnellingisaphenomenonwhereelectronstunnelthroughapotentialbarrierwithaprobabilitydeterminedbytheheightandwidthofthebarrier.Inlow-voltageflashmemory,athinoxidelayerisusedasthebarrierandahighelectricfieldisappliedtoreducethebarrierheightandwidth,allowingelectronstotunnelbetweenthefloatinggateandthesubstrate.
Themainadvantageoflow-voltageflashmemoryisitslowprogrammingvoltage,whichcanbeaslowas5Vcomparedtotheconventionalflashmemory's12V.Alowprogrammingvoltagereducesthepowerconsumptionandimprovesthereliabilityofthedevice.However,low-voltageflashmemoryfacesseveralchallengesthatneedtobeaddressed.
Firstly,thelowprogrammingvoltageincreasesthesensitivityofthedevicetoprocessvariations,suchasdopingfluctuationsandoxidethicknessvariations.Thesevariationscanleadtosignificantvariationsintheprogrammingcharacteristicsofthedevice,affectingitsreliabilityandperformance.
Secondly,thelowprogrammingvoltagedecreasestheprogrammingspeedofthedevice.ThisisbecausetheF-Ntunnellingprobabilityisproportionaltotheappliedelectricfield,andalowelectr