一种InPHEMT分布小信号模型建模方法（英文）-豆柴文库

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一种InPHEMT分布小信号模型建模方法（英文）
Title:AMethodforModelingInPHEMTDistributedSmallSignalModel
Abstract:
Inthispaper,weproposeamethodformodelingthedistributedsmallsignalmodelofInPHEMT(IndiumPhosphideHighElectronMobilityTransistor).TheInPHEMTdeviceisextensivelyusedinhigh-frequencyapplicationsduetoitshighelectronmobilityandlownoisecharacteristics.Accuratemodelingofitssmallsignalbehavioriscrucialforcircuitdesignandanalysis.Ourproposedmethodleveragesthedistributednatureofthedevicetocapturethevariationsindeviceparametersacrossitsactiveregions,resultinginamoreaccuraterepresentationofitssmallsignalresponse.Theformulationandimplementationofthemodelarediscussed,followedbythevalidationofthemodelusingmeasureddata.TheresultsdemonstratetheeffectivenessofourproposedmethodinpredictingthesmallsignalbehaviorofInPHEMTdevices.
1.Introduction
InPHEMTisatypeoffield-effecttransistor(FET)thatisbasedonaheterostructuredesignusingIndiumPhosphide(InP)asthesemiconductormaterial.ItoffersseveraladvantagesoverotherFETtechnologies,includinghighelectronmobilityandlownoiseperformance.ThesecharacteristicsmakeInPHEMTdevicessuitableforapplicationsinmicrowaveandmillimeter-wavefrequencies,suchaslow-noiseamplifiers,poweramplifiers,andmixers.AccuratemodelingofInPHEMTdevicesisessentialforcircuitdesign,optimization,andperformanceanalysis.
2.DistributedSmallSignalModel
ThedistributedsmallsignalmodelconsidersthedistributednatureoftheInPHEMTdevice,takingintoaccountvariationsindeviceparametersalongthedevice'sactiveregions.Thismodelprovidesamoreaccuraterepresentationofthesmallsignalbehavior,particularlyathigherfrequencieswheredistributedeffectsbecomemoresignificant.Thedistributedmodelcanbeformulatedusingthetransmissionlinetheoryandcanbeimplementedusingcircuitsimulationtools.
3.FormulationoftheModel
Thedistributedsmallsignalmodelisformulatedbydividingthedeviceintomultiplesectionsandmodelingeachsectionasatransmissionlinewithitscharacteristicimpedanceandpropagationconstant.Thedeviceisdividedintotworegions:source-endregionanddr